Schottky barriers were formed by sputtering the metals on the front side of 4H-SiC ( Si face) by magnetron sputtering to study the rectifying characteristics of the contacts between the metals and 4H-SiC. The infections of the annealing under different temperature were also studied. 采用磁控溅射的方法在4H-SiC样品上分别沉积四种金属薄膜(Ag,Cu,Ni,Cr)形成Schottky接触,研究了不同温度退火对Schottky势垒高度的影响。
A Cathodic Sputtering Atomizer and Its Application to Direct Analysis of Metals and Alloys 阴极溅射原子化器在合金分析中的应用